Calibrated in-vacuum quantum efficiency system for metallic and III-V thin-film photocathodes

Atif Rasheed; Christopher Benjamin; Ibrahim Elhoussieny; Yorck A. Ramachers; Gavin R. Bell

doi:10.1116/6.0002904

Calibrated in-vacuum quantum efficiency system for metallic and III-V thin-film photocathodes

Atif Rasheed
, Christopher Benjamin
, Ibrahim Elhoussieny
, Yorck A. Ramachers
, Gavin R. Bell

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

The construction and calibration of a high vacuum system for thin film growth and in situ quantum efficiency (QE) measurement are described. Surface cleaning by in situ argon ion sputtering and annealing is supported. The QE measurement is based on an external 265 nm LED and in situ positively biased collector grid. The system is applied to two metallic and two semiconducting photocathodes: polycrystalline silver and copper, and single crystal InP and InSb. Surface cleaning protocols are shown to have a dramatic effect on the QE for all of these materials. The maximum QE values achieved for clean InSb and InP are around 8 × 10−5, for Cu 9 × 10−5 and for Ag 2 × 10−4.

Original language	English
Journal	Journal of Vacuum Science and Technology B
Volume	41
Issue number	6
DOIs	https://doi.org/10.1116/6.0002904
Publication status	Published - 1 Dec 2023

Keywords

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials
Instrumentation
Materials Chemistry
Process Chemistry and Technology
Surfaces, Coatings and Films

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10.1116/6.0002904Licence: CC BY-NC-ND

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title = "Calibrated in-vacuum quantum efficiency system for metallic and III-V thin-film photocathodes",

abstract = "The construction and calibration of a high vacuum system for thin film growth and in situ quantum efficiency (QE) measurement are described. Surface cleaning by in situ argon ion sputtering and annealing is supported. The QE measurement is based on an external 265 nm LED and in situ positively biased collector grid. The system is applied to two metallic and two semiconducting photocathodes: polycrystalline silver and copper, and single crystal InP and InSb. Surface cleaning protocols are shown to have a dramatic effect on the QE for all of these materials. The maximum QE values achieved for clean InSb and InP are around 8 × 10−5, for Cu 9 × 10−5 and for Ag 2 × 10−4.",

keywords = "Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials, Instrumentation, Materials Chemistry, Process Chemistry and Technology, Surfaces, Coatings and Films",

author = "Atif Rasheed and Christopher Benjamin and Ibrahim Elhoussieny and Ramachers, \{Yorck A.\} and Bell, \{Gavin R.\}",

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T1 - Calibrated in-vacuum quantum efficiency system for metallic and III-V thin-film photocathodes

AU - Rasheed, Atif

AU - Benjamin, Christopher

AU - Elhoussieny, Ibrahim

AU - Ramachers, Yorck A.

AU - Bell, Gavin R.

PY - 2023/12/1

Y1 - 2023/12/1

N2 - The construction and calibration of a high vacuum system for thin film growth and in situ quantum efficiency (QE) measurement are described. Surface cleaning by in situ argon ion sputtering and annealing is supported. The QE measurement is based on an external 265 nm LED and in situ positively biased collector grid. The system is applied to two metallic and two semiconducting photocathodes: polycrystalline silver and copper, and single crystal InP and InSb. Surface cleaning protocols are shown to have a dramatic effect on the QE for all of these materials. The maximum QE values achieved for clean InSb and InP are around 8 × 10−5, for Cu 9 × 10−5 and for Ag 2 × 10−4.

AB - The construction and calibration of a high vacuum system for thin film growth and in situ quantum efficiency (QE) measurement are described. Surface cleaning by in situ argon ion sputtering and annealing is supported. The QE measurement is based on an external 265 nm LED and in situ positively biased collector grid. The system is applied to two metallic and two semiconducting photocathodes: polycrystalline silver and copper, and single crystal InP and InSb. Surface cleaning protocols are shown to have a dramatic effect on the QE for all of these materials. The maximum QE values achieved for clean InSb and InP are around 8 × 10−5, for Cu 9 × 10−5 and for Ag 2 × 10−4.

KW - Electrical and Electronic Engineering

KW - Electronic, Optical and Magnetic Materials

KW - Instrumentation

KW - Materials Chemistry

KW - Process Chemistry and Technology

KW - Surfaces, Coatings and Films

U2 - 10.1116/6.0002904

DO - 10.1116/6.0002904

M3 - Article

SN - 2166-2746

VL - 41

JO - Journal of Vacuum Science and Technology B

JF - Journal of Vacuum Science and Technology B

IS - 6

ER -

Calibrated in-vacuum quantum efficiency system for metallic and III-V thin-film photocathodes

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